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Title: Photoluminescence studies of cadmium selenide crystals in contact with group III trialkyl derivatives

Journal Article · · Journal of the Electrochemical Society
DOI:https://doi.org/10.1149/1.1838663· OSTI ID:653389
; ;  [1]
  1. Univ. of Wisconsin, Madison, WI (United States)

Upon exposure to several group III trialkyls: trimethylaluminum, trimethylgallium, triethylgallium, and trimethylindium, the bandedge photoluminescence intensity of etched single-crystal n-CdSe samples exhibits a large and irreversible enhancement relative to a vacuum reference ambient. From X-ray photoelectron spectroscopy, this photoluminescence enhancement, which ranges from factors of {approximately}3 to 100, appears to correspond to irreversible binding of a group III metal-bearing species to the surface. Subsequent exposure of the sample to butylamine, C{sub 4}H{sub 11}N, isomers can partially reverse this enhancement by {approximately}10 to 80%, depending upon the amine and group III trialkyl precursor combination, presumably through adduct formation with a group III atom-derived, surface-confined species. The magnitude of the amine interaction appears to be the greatest for combinations of less bulky amines with trimethylaluminum- and trimethylgallium-derived species. Reversible photoluminescence enhancements could be obtained through use of volatile discrete 1:1 trimethylamine adducts of trimethylaluminum and trimethylgallium. These adducts bind to the CdSe surface with an equilibrium constant of {approximately}10{sup 4} atm{sup {minus}1}, based on the Langmuir adsorption isotherm model. Implications for the use of these effects in sensing chemical vapor deposition precursor molecules are discussed.

Sponsoring Organization:
USDOE
OSTI ID:
653389
Journal Information:
Journal of the Electrochemical Society, Vol. 145, Issue 7; Other Information: PBD: Jul 1998
Country of Publication:
United States
Language:
English

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