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Title: Semiconducting behaviour of RuGa/sub 2/

Journal Article · · Mater. Res. Bull.; (United States)

RuGa/sub 2/ with TiSi/sub 2/-type structure was prepared by inductively heating ruthenium and gallium in a water-cooled copper boat under an argon atmosphere. The electric conductivity of a polycrystalline sample of nearly rectangular shape (7 x 5 x 4 mm/sup 3/) was measured in the temperature range from 20 to 400/sup 0/C by the four-point technique. RuGa/sub 2/ is a semiconductor with an electric resistivity of 0.2 ohm.cm at room temperature and a band gap of about 0.42 eV. Semiconducting properties have been qualitatively demonstrated for RuA1/sub 2/ (TiSi/sub 2/-type structure) and for Os/sub 2/Si/sub 3/ (Ru/sub 2/Si/sub 3/-type structure, defect TiSi/sub 2/-structure).

Research Organization:
Institut fur Anorganische Chemie der Universitat, Munchen
OSTI ID:
6467817
Journal Information:
Mater. Res. Bull.; (United States), Vol. 19:9
Country of Publication:
United States
Language:
English

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