The retention characteristics of nonvolatile SNOS memory transistors in a radiation environment: Experiment and model

Conference · Thu Jan 01 00:00:00 EST 1987

OSTI ID:6414396

McWhorter, P J; Miller, S L; Dellin, T A; Axness, C L

Experimental data and a model to accurately and quantitatively predict the data are presented for retention of SNOS memory devices over a wide range of dose rates. A wide range of SNOS stack geometries are examined. The model is designed to aid in screening nonvolatile memories for use in a radiation environment.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6414396
• Report Number(s): SAND-87-0299C; CONF-870724-9; ON: DE87005857; TRN: 87-023732
• Resource Relation: Conference: 24. annual conference on nuclear and space radiation in electronics, Snowmass, CO, USA, 28 Jul 1987; Other Information: Paper copy only, copy does not permit microfiche production
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
SEMICONDUCTOR STORAGE DEVICES
PHYSICAL RADIATION EFFECTS
DIFFERENTIAL EQUATIONS
ELECTRICAL PROPERTIES
ELECTRON EMISSION
ELECTRONS
EXPERIMENTAL DATA
HOLES
MATHEMATICAL MODELS
TUNNEL EFFECT
DATA
ELEMENTARY PARTICLES
EMISSION
EQUATIONS
FERMIONS
INFORMATION
LEPTONS
MEMORY DEVICES
NUMERICAL DATA
PHYSICAL PROPERTIES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems