Energy-loss distributions for 2. 5-MeV He[sup +] ions incident on Si single crystals
- Department of Physics, University of Florida, P.O. Box 118440, Gainesville, Florida 32611-8440 (United States)
The energy distributions for 2.5-MeV He[sup +] ions incident on thin Si single crystals are studied. Detailed angular scans are taken through the [l angle]110[r angle] and [l angle]100[r angle] axial directions along the [l brace]111[r brace] and [l brace]110[r brace] planar directions as well as perpendicular to the planar directions for Si(110) (0.74- and 1.4-[mu]m-thick) and Si(100) (0.75-[mu]m-thick) samples, respectively. Complex structures in the distributions are observed throughout the angular scans. The experimental distributions are reasonably well reproduced by a Monte Carlo simulation using the semiclassical approximation [N. M. Kabachnik, V. N. Kondratev, and O. V. Chumanova, Phys. Status Solidi B 145, 103 (1988)] for energy loss to core electrons and the two-component free-electron-gas model for energy loss to valence electrons. Systematic deviations between theory and experiment are observed and discussed in terms of an increased penetration depth necessary for He[sup +] ions to become fully ionized when channeled.
- OSTI ID:
- 6401573
- Journal Information:
- Physical Review A; (United States), Vol. 51:3; ISSN 1050-2947
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
HELIUM IONS
ENERGY LOSSES
SILICON
ION COLLISIONS
ANGULAR DISTRIBUTION
ION CHANNELING
ION SPECTROSCOPY
MEV RANGE 01-10
MONOCRYSTALS
MONTE CARLO METHOD
ORIENTATION
SIMULATION
THICKNESS
THIN FILMS
CALCULATION METHODS
CHANNELING
CHARGED PARTICLES
COLLISIONS
CRYSTALS
DIMENSIONS
DISTRIBUTION
ELEMENTS
ENERGY RANGE
FILMS
IONS
LOSSES
MEV RANGE
SEMIMETALS
SPECTROSCOPY
665300* - Interactions Between Beams & Condensed Matter- (1992-)