X-ray absorption spectroscopy and atomic force microscopy study of bias-enhanced nucleation of diamond films
- Instituto de Ciencia de Materiales, C.S.I.C., Cantoblanco28049, Madrid (Spain)
- Lawrence Livermore National Laboratory, Livermore, California94551 (United States)
- Department of Physics, University of Wisconsin--Madison, Madison, Wisconsin53706 (United States)
The bias-enhanced nucleation of diamond on Si(100) has been studied by x-ray absorption near-edge spectroscopy (XANES) and atomic force microscopy, two techniques well suited to characterize nanometric crystallites. Diamond nuclei of {approximately}15nm are formed after 5 min of bias-enhanced treatment. The number of nuclei and its size increases with the time of application of the bias voltage. A nanocrystalline diamond film is attained after 20 min of bias-enhanced nucleation. At the initial nucleation stages, the Si substrate appears covered with diamond crystallites and graphite, without SiC being detected by XANES. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 627725
- Journal Information:
- Applied Physics Letters, Vol. 72, Issue 17; Other Information: PBD: Apr 1998
- Country of Publication:
- United States
- Language:
- English
Similar Records
Orientation of graphitic planes during the bias-enhanced nucleation of diamond on silicon: An x-ray absorption near-edge study
Microstructual study of the alternating current bias-enhanced nucleation and growth of diamond on (001) silicon wafers
Effect of pretreatment bias on the nucleation and growth mechanisms of ultrananocrystalline diamond films via bias-enhanced nucleation and growth: An approach to interfacial chemistry analysis via chemical bonding mapping
Journal Article
·
Sun Nov 01 00:00:00 EST 1998
· Applied Physics Letters
·
OSTI ID:627725
+1 more
Microstructual study of the alternating current bias-enhanced nucleation and growth of diamond on (001) silicon wafers
Journal Article
·
Sun Jun 01 00:00:00 EDT 1997
· Applied Physics Letters
·
OSTI ID:627725
+1 more
Effect of pretreatment bias on the nucleation and growth mechanisms of ultrananocrystalline diamond films via bias-enhanced nucleation and growth: An approach to interfacial chemistry analysis via chemical bonding mapping
Journal Article
·
Sun Feb 01 00:00:00 EST 2009
· Journal of Applied Physics
·
OSTI ID:627725
+3 more