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Title: Hard error generation by neutron irradiation

Conference ·
OSTI ID:5932449

We have observed that neutron-induced fission of uranium contaminants present in alumina ceramic package lids results in the release of fission fragments that can cause hard errors in metal nitride-oxidenonvolatile RAMs (MNOS NVRAMs). Hard error generation requires the simultaneous presence of (1) a fission fragment with a linear energy transfer (LET) greater than 20 MeV/mg/cm/sup 2/ moving at an angle of 30/sup 0/ or less from the electric field in the high-field, gate region of the memory transistor and (2) a WRITE or ERASE voltage on the oxide-nitride transistor gate. In reactor experiments, we observe these hard errors when a ceramic lid is used on both MNOS NVRAMs and polysilicon-nitride-oxide-semiconductor (SNOS) capacitors, but hard errors are not observed when a gold-plated kovar lid is used on the package containing these die. We have mapped the tracks of the fission fragments released from the ceramic lids with a mica track detector and used a Monte Carlo model of fission fragment transport through the ceramic lid to measure the concentration of uranium present in the lids. Our concentration measurements are in excellent agreement with others' measurements of uranium concentration in ceramic lids. Our Monte Carlo analyses also agree closely with our measurements of hard error probability in MNOS NVRAMs. 15 refs., 13 figs., 8 tabs.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA); Rensselaer Polytechnic Inst., Troy, NY (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5932449
Report Number(s):
SAND-87-0408C; CONF-870724-11; ON: DE87013062; TRN: 87-038427
Resource Relation:
Conference: 24. annual conference on nuclear and space radiation in electronics, Snowmass, CO, USA, 28 Jul 1987; Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English