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Title: Hydrogen evolution at a Pt-modified InP photoelectrode: Improvement of current-voltage characteristics by HCl etching

Journal Article · · Journal of Physical Chemistry; (USA)
DOI:https://doi.org/10.1021/j100155a062· OSTI ID:5880269

Hydrogen photoevolution at p-InP electrodes coated with platinum and palladium has been studied. Efficient and stable solar to chemical energy conversion has been achieved after etching the electrodes with concentrated HCl. The current-voltage (I-V) behavior of the as-prepared electrode covered with a continuous Pt layer is poor, due probably to the presence of defect states in InP. The photocurrent density of this electrode decreases with time under illumination, presumably due to an increase in the defect density. After etching of the electrode with concentrated HCl, the barrier height is increased to 1.0 V, and the I-V characteristics are improved remarkably, showing no degradation under illumination. SEM, XPS, and AES analyses show that the concentrated HCl solution dissolves the InP substrate in the InP/Pt interfacial region, and simultaneously part of the Pt is removed from the InP surface. The I-V characteristics of the Pt-deposited electrodes are unaffected by hydrogen or nitrogen bubbling and the reason is discussed.

OSTI ID:
5880269
Journal Information:
Journal of Physical Chemistry; (USA), Vol. 95:2; ISSN 0022-3654
Country of Publication:
United States
Language:
English