Interfacial reactions between amorphous W-Si thin films and polycrystalline overlayers
Interactions between amorphous metal thin films and either a substrate or an overlayer can limit their effectiveness as diffusion barriers. We have found in previous studies that Au and Al polycrystalline thin films in contact with amorphous W-Si lowers the crystallization temperature of the a-(W-Si) by at least 100C. In contrast Cu and Mo have no apparent effect on the stability of the amorphous layer. The mechanisms leading to premature crystallization are not well understood. Amorphous W/sub .72/Si/sub .28/ was deposited by dc sputtering onto single crystal Si substrates. Overlayers of Al were then evaporated onto the W-Si. Using Auger electron spectroscopy depth profiling coupled with cross-section TEM, we have studied interfacial reactions between the amorphous layer and polycrystalline Al. Auger profiling results show that in the case of Al overlayers, W and Si diffuse out of the a-(W-Si) into the Al where WAl/sub 12/ forms. These results can be explained in the context of three binary diffusion couples, W-Si, W-Al, Al-Si, and the individual interactions associated with these couples.
- Research Organization:
- Wisconsin Univ., Madison (USA). Materials Science Center
- DOE Contract Number:
- FG02-84ER45096
- OSTI ID:
- 5821878
- Report Number(s):
- CONF-851217-63; ON: DE86008959
- Resource Relation:
- Conference: Materials Research Society meeting, Boston, MA, USA, 2 Dec 1985; Other Information: Paper copy only, copy does not permit microfiche production
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SILICON ALLOYS
CRYSTALLIZATION
TUNGSTEN ALLOYS
ALUMINIUM
AMORPHOUS STATE
AUGER ELECTRON SPECTROSCOPY
CHEMICAL REACTIONS
INTERFACES
LAYERS
SILICON
THIN FILMS
ALLOYS
ELECTRON SPECTROSCOPY
ELEMENTS
FILMS
METALS
PHASE TRANSFORMATIONS
SEMIMETALS
SPECTROSCOPY
360102* - Metals & Alloys- Structure & Phase Studies