Cosmic ray induced permanent damage in MNOS EAROMs

Journal Article · Sat Dec 01 00:00:00 EST 1984 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1984.4333551· OSTI ID:5619928

Blandford, J T; Pickel, J C; Waskiewicz, A E

Permanent damage to the memory cells in Metal Nitride Oxide Semiconductor (MNOS) Electrically Alterable Read Only Memories (EAROM) has been observed after exposure to a heavy ion beam from a cyclotron under high field (Erase/Write Mode) conditions. The probability, of permanent damage depends on the system application.

• Research Organization: Rockwell International, Anaheim, CA 92803
• OSTI ID: 5619928
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. NS-31:6
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
MOS TRANSISTORS
COSMIC RADIATION
CYCLOTRONS
DAMAGE
ION BEAMS
ACCELERATORS
BEAMS
CYCLIC ACCELERATORS
IONIZING RADIATIONS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems