Determination of the implantation dose in silicon wafers by X-ray fluorescence analysis
- Institut fuer Spektrochemie und Angewandte Spektroskopie, Dortmund (West Germany)
- Johannes-Kepler-Universitaet, Linz (Austria)
The ion dose implanted in silicon wafers was determined by X-ray fluorescence analysis after the implantation process. As only near-surface layers below 1-{mu}m thickness were considered, the calibration could be carried out with external standards consisting of thin films of doped gelatine spread on pure wafers. Dose values for Cr and Co were determined between 4 {times} 10{sup 15} and 2 {times} 10{sup 17} atoms/cm{sup 2}, the detection limits being about 3 {times} 10{sup 14} atoms/cm{sup 2}. The results are precise and accurate apart from a residual scatter of less than 7%. This was confirmed by flame atomic absorption spectrometry after volatilization of the silicon matrix as SiF{sub 4}. It was found that ion-current measurements carried out during the implantation process can have considerable systematic errors.
- OSTI ID:
- 5408387
- Journal Information:
- Analytical Chemistry (Washington); (United States), Vol. 62:15; ISSN 0003-2700
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
SILICON
ION IMPLANTATION
ABSORPTION SPECTROSCOPY
CHROMIUM
COBALT
SURFACE PROPERTIES
X-RAY FLUORESCENCE ANALYSIS
CHEMICAL ANALYSIS
ELEMENTS
METALS
NONDESTRUCTIVE ANALYSIS
SEMIMETALS
SPECTROSCOPY
TRANSITION ELEMENTS
X-RAY EMISSION ANALYSIS
400102* - Chemical & Spectral Procedures