Parametric distortion of the optical absorption edge of a magnetic semiconductor by a strong laser field

Journal Article · Sun Sep 15 00:00:00 EDT 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.335974· OSTI ID:5386127

Nunes, O A.C.

The influence of a strong laser field on the optical absorption edge of a direct-gap magnetic semiconductor is considered. It is shown that as the strong laser intensity increases the absorption coefficient is modified so as to give rise to an absorption tail below the free-field forbidden gap. An application is made for the case of the EuO.

• Research Organization: Solid State Laboratory Physics Department, University of Brasilia, 70910 Brasilia, D.F. Brasil and Department of Theoretical Physics, 1 Keble Road, Oxford OX1 3NP, United Kingdom
• OSTI ID: 5386127
• Journal Information: J. Appl. Phys.; (United States), Vol. 58:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EUROPIUM OXIDES
OPACITY
PHOTON COLLISIONS
MAGNETIC SEMICONDUCTORS
CARBON DIOXIDE LASERS
ENERGY GAP
LASER RADIATION
PARAMAGNETISM
CHALCOGENIDES
COLLISIONS
ELECTROMAGNETIC RADIATION
EUROPIUM COMPOUNDS
GAS LASERS
LASERS
MAGNETISM
MATERIALS
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATIONS
RARE EARTH COMPOUNDS
SEMICONDUCTOR MATERIALS
360204* - Ceramics
Cermets
& Refractories- Physical Properties