Silicon sheet technologies
Conference
·
· Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:5368897
A classification of silicon sheet growth methods by meniscus geometry permits them to be discussed in three groups: short meniscus techniques, high meniscus techniques, and extended meniscus or large solid/liquid interface area techniques. A second parameter, meniscus shaper interaction with the liquid silicon, is also instrumental in determining the characteristics of the various sheet processes. The current status of each process is discussed in the context of meniscus geometry and shaper/melt interaction. One aspect of sheet growth, surface area generation rate, is quantitatively compared with combined ingot growth and wafering surface area generation rates.
- Research Organization:
- Solar Energy Research Institute, Golden, Colorado
- DOE Contract Number:
- AC02-77CH00178
- OSTI ID:
- 5368897
- Report Number(s):
- CONF-820906-
- Journal Information:
- Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Conference: 16. IEEE photovoltaics specialists conference, San Diego, CA, USA, 28 Sep 1982
- Country of Publication:
- United States
- Language:
- English
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