Low frequency noise behavior in a-Si:H Schottky barrier devices

Conference · Tue Dec 31 00:00:00 EST 1996

OSTI ID:527717

Aflatooni, K; Nathan, A; Hornsey, R ^[1]

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1. Univ. of Waterloo, Ontario (Canada). Electrical and Computer Engineering

The authors present a systematic experimental study of low frequency noise behavior in Mo/a-Si:H Schottky diodes under reverse bias operation. The noise in the Schottky diode was found to increase with increasing reverse current and with an approximate 1/f behavior at low bias voltages, yielding a Hooge parameter in the range (2 to 3) {times} 10{sup {minus}4}. At high reverse voltages, due to electrical stressing and hence, bias-induced material instability, a significant deviation from the 1/f behavior was observed.

• OSTI ID: 527717
• Report Number(s): CONF-960401-; ISBN 1-55899-323-1; TRN: IM9741%%145
• Resource Relation: Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Amorphous silicon technology -- 1996; Hack, M. [ed.] [dpiX, Palo Alto, CA (United States)]; Schiff, E.A. [ed.] [Syracuse Univ., NY (United States)]; Wagner, S. [ed.] [Princeton Univ., NJ (United States)]; Schropp, R. [ed.] [Utrecht Univ. (Netherlands)]; Matsuda, Akihisa [ed.] [Electrotechnical Lab., Tsukuba (Japan)]; PB: 929 p.; Materials Research Society symposium proceedings, Volume 420
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
ELECTRICAL PROPERTIES
SILICON
SCHOTTKY BARRIER DIODES
MOLYBDENUM
NOISE
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
POWER
SPECTRAL DENSITY
FREQUENCY DEPENDENCE