Observation of configurational switching of deep defects in a-Si:H using thermal step insertion during capacitance transient measurements
- Univ. of Oregon, Eugene, OR (United States). Dept. of Physics
In standard, isothermal capacitance transient measurements, configurational changes in defect states are normally very difficult to identify because, depending on the relative rates of thermal emission to the configurational relaxation, charge will be emitted predominantly from only one configuration. The authors have found, however, that employing a thermal step during the emission phase of the transient enhances the effect of defect relaxation; one can then observe the resultant switch between distinct configurations. The authors have applied this method quite successfully to lightly doped n-type a-Si:H samples by varying the overall temperature (between 270K and 350K) and the magnitude of the temperature switch (from 20K to 35K). For the smallest temperature steps, the resultant transients suggest two distinct configurations that, they believe, reflect only a fraction of the many latent configurations that account for the full range of relaxation possible.
- OSTI ID:
- 527711
- Report Number(s):
- CONF-960401-; ISBN 1-55899-323-1; TRN: IM9741%%139
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Amorphous silicon technology -- 1996; Hack, M. [ed.] [dpiX, Palo Alto, CA (United States)]; Schiff, E.A. [ed.] [Syracuse Univ., NY (United States)]; Wagner, S. [ed.] [Princeton Univ., NJ (United States)]; Schropp, R. [ed.] [Utrecht Univ. (Netherlands)]; Matsuda, Akihisa [ed.] [Electrotechnical Lab., Tsukuba (Japan)]; PB: 929 p.; Materials Research Society symposium proceedings, Volume 420
- Country of Publication:
- United States
- Language:
- English
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