Ion energy distributions in silane-hydrogen plasmas
- Utrecht Univ. (Netherlands). Dept. of Atomic and Interface Physics
- FOM Inst. for Plasmaphysics Rijnhuizen, Nieuwegein (Netherlands)
For the first time ion energy distributions (IED) of different ions from silane-hydrogen (SiH{sub 4}-H{sub 2}) RF plasmas are presented, i.e., the distributions of SiH{sub 3}{sup +}, SiH{sub 2}{sup +} and Si{sub 2}H{sub 4}{sup +}. The energy distributions of SiH{sub 3}{sup +} and SiH{sub 2}{sup +} ions show peaks, which are caused by a charge exchange process in the sheath. A method is presented by which the net charge density in the sheath is determined from the plasma potential and the energy positions of the charge exchange peaks. Knowing the net charge density in the sheath and the plasma potential, the sheath thickness can be determined and an estimation of the absolute ion fluxes can be made. The flux of ions can, at maximum, account for 10% of the observed deposition rate.
- OSTI ID:
- 527672
- Report Number(s):
- CONF-960401-; ISBN 1-55899-323-1; TRN: IM9741%%100
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Amorphous silicon technology -- 1996; Hack, M. [ed.] [dpiX, Palo Alto, CA (United States)]; Schiff, E.A. [ed.] [Syracuse Univ., NY (United States)]; Wagner, S. [ed.] [Princeton Univ., NJ (United States)]; Schropp, R. [ed.] [Utrecht Univ. (Netherlands)]; Matsuda, Akihisa [ed.] [Electrotechnical Lab., Tsukuba (Japan)]; PB: 929 p.; Materials Research Society symposium proceedings, Volume 420
- Country of Publication:
- United States
- Language:
- English
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