Origin of the pulse response characteristics of zinc oxide varistors

Journal Article · Fri Dec 01 00:00:00 EST 1989 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.343666· OSTI ID:5247048

Modine, F A; Wheeler, R B ^[1]; Shim, Y; Cordaro, J F ^[2]

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1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (USA)
2. New York State College of Ceramics at Alfred University, Alfred, New York 14802 (USA)

Pulse response characteristics are reported for simple varistor materials in the ZnO-Bi{sub 2}O{sub 3}-MnO{sub 2} system. It is shown that small additions of Li{sub 2}O or In{sub 2}O{sub 3} can enhance or eliminate the materials inductive behavior, which is responsible for voltage overshoot and current undershoot. A possible connection of the inductive behavior with deep electron traps, which is suggested by the equal time constants at room temperature of the inductive current rise and the electron emission from the traps, is examined. Measurements of the pulse response characteristics at low temperature reveal a weak temperature dependence that fails to support such a connection. A phenomenological model is given that predicts the varistor pulse response characteristics. Both the experimental results and the model predictions are discussed in relation to theories that connect the inductive response to electron holes that become trapped at varistor barriers.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5247048
• Journal Information: Journal of Applied Physics; (USA), Vol. 66:11; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ZINC OXIDES
ELECTRICAL PROPERTIES
ELECTRON EMISSION
LOW TEMPERATURE
MATHEMATICAL MODELS
MEDIUM TEMPERATURE
PULSES
SEMICONDUCTOR RESISTORS
CHALCOGENIDES
ELECTRICAL EQUIPMENT
EMISSION
EQUIPMENT
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RESISTORS
SEMICONDUCTOR DEVICES
ZINC COMPOUNDS
360204* - Ceramics
Cermets
& Refractories- Physical Properties