Empirical study of the metal-nitride-oxide-semiconductor device characteristics deduced from a microscopic model of memory traps

Journal Article · Thu Jul 15 00:00:00 EDT 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93438· OSTI ID:5190234

Ngai, K L; Hsia, Y

A graded-nitride gate dielectric metal-nitride-oxide-semiconductor (MNOS) memory transistor exhibiting superior device characteristics is presented and analyzed based on a qualitative microscopic model of the memory traps. The model is further reviewed to interpret some generic properties of the MNOS memory transistors including memory window, erase-write speed, and the retention-endurance characteristic features.

• Research Organization: Naval Research Laboratory, Washington, D.C. 20375
• OSTI ID: 5190234
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 41:2
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
MEMORY DEVICES
SEMICONDUCTOR DEVICES
ELECTRICAL PROPERTIES
MATHEMATICAL MODELS
METALS
NITRIDES
OXIDES
TRANSISTORS
TRAPS
CHALCOGENIDES
ELEMENTS
NITROGEN COMPOUNDS
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
420201* - Engineering- Cryogenic Equipment & Devices