PbTe(Ga) -- New multispectral infrared photodetector
- Inst. of Rare Metals, Moscow (Russian Federation)
- Moscow State Univ. (Russian Federation). Physics Dept.
Doping of the lead telluride--narrow-gap semiconductor--with gallium results under certain conditions in the Fermi level pinning in the gap thus providing the semi insulating state of material. Besides that, the persistent photoconductivity effect is observed at temperatures T < {Tc} = 80 K. The photoresponse kinetics consists of two parts: the slow one with the characteristic time t{sub char} going up to 10{sup 4} s at T = 4.2 K, and the fast part with t{sub char} of the order of 10 ms. The authors have measured the spectra of a fast part of the photoresponse using the Fourier-transform spectrometer Bruker IFS-113v. The photoconductivity is observed in two spectral regions: in the middle- and far-infrared. Response in the middle-infrared consists of the ordinary fundamental band and a strong superimposed resonance-like structure just at the bandgap energy. The position of this spectral line may be tuned in a wide range (3.5--5.5) {micro}m by variation of temperature and/or composition of a lead telluride-based alloy. This middle-infrared photoresponse becomes considerable already at T = 160 K. The photoresponse in the far-infrared may be depending on the excitation conditions an analogous resonance-like structure at a wavelength 70 {micro}m, or a broad band with the cutoff wavelength at least higher than 500 {micro}m, which is the highest cutoff wavelength for the photon detectors observed up to date.
- Sponsoring Organization:
- Russian Foundation for Basic Research (Russian Federation)
- OSTI ID:
- 323907
- Report Number(s):
- CONF-971201-; TRN: IM9912%%225
- Resource Relation:
- Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Semiconductors for room-temperature radiation detector applications 2; James, R.B. [ed.] [Sandia National Labs., Livermore, CA (United States)]; Schlesinger, T.E. [ed.] [Carnegie Mellon Univ., Pittsburgh, PA (United States)]; Siffert, P. [ed.] [Lab. PHASE/CNRS, Strasbourg (France)]; Dusi, W. [ed.] [Inst. TESRE/CNR, Bologna (Italy)]; Squillante, M.R. [ed.] [Radiation Monitoring Devices, Inc., Watertown, MA (United States)]; O`Connell, M. [ed.] [Dept. of Energy, Washington, DC (United States)]; Cuzin, M. [ed.] [LETI/CEA, Grenoble (France)]; PB: 681 p.; Materials Research Society symposium proceedings, Volume 487
- Country of Publication:
- United States
- Language:
- English
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