Characterization and optimization of the Al/SiO{sub x}/p-Si MIS contact in MIS-IL silicon solar cells
Conference
·
OSTI ID:302439
- Inst. fuer Solarenergieforschung Hameln/Emmerthal, Emmerthal (Germany)
- Univ. of New South Wales, Sydney, New South Wales (Australia)
The Al/SiO{sub x}/p-Si MIS tunnel contact is an essential part of metal-insulator-semiconductor inversion-layer (MIS-IL) silicon solar cells. The authors experimentally determined the recombination properties (saturation current density J{sub 0} and ideality factor n) of the MSI contact in MIS-IL silicon solar cells fabricated at ISFH. Based on these measurements, it has been possible to resolve the contribution of the MIS contact to the total recombination losses in 1-sun illuminated MIS-IL solar cells by means of 2D numerical modeling. Furthermore, a 2D numerical optimization study is performed where the optimum width of the MIS contact fingers of advanced MIS-IL silicon solar cells is determined.
- OSTI ID:
- 302439
- Report Number(s):
- CONF-970953-; TRN: IM9904%%227
- Resource Relation:
- Conference: 26. IEEE photovoltaic specialists conference, Anaheim, CA (United States), 29 Sep - 3 Oct 1997; Other Information: PBD: 1997; Related Information: Is Part Of Conference record of the twenty sixth IEEE photovoltaic specialists conference -- 1997; PB: 1477 p.
- Country of Publication:
- United States
- Language:
- English
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