Formation of misfit dislocations with in-plane Burgers vectors in boron diffused (111) silicon
- Case Western Reserve Univ., Cleveland, OH (United States). Dept. of Materials Science and Engineering
The study of different stages of boron diffusion by plan-view and cross-sectional transmission electron microscopy shows that, as in the classical model of Matthews, misfit dislocation half-loops are initially generated at the surface. The Burgers vector of the dislocation half-loop is inclined with respect to the surface and thus the initial misfit dislocations are not very efficient in strain relaxation. As the diffusion proceeds, non-parallel dislocations interact and give rise to product segments that have in-plane Burgers vectors parallel to the surface. Based on the observations, a model is presented to elucidate the details of these interactions and the formation of more efficient misfit dislocations from the less-efficient inclined ones.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 247964
- Journal Information:
- Acta Materialia, Vol. 44, Issue 5; Other Information: PBD: May 1996
- Country of Publication:
- United States
- Language:
- English
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