Schlieren photography of current filaments in surface-related breakdown of silicon

Journal Article · Thu Feb 01 00:00:00 EST 1996 · IEEE Transactions on Plasma Science

DOI:https://doi.org/10.1109/27.491694· OSTI ID:244923

Hankla, B J; Williams, P F ^[1]

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1. Univ. of Nebraska, Lincoln, NE (United States). Dept. of Electrical Engineering

The authors have used a modified Schlieren technique to photograph current filaments formed inside silicon during the very early stages of surface-related breakdown. They believe that the features they see are due to heating in the filamentary channel. The very rapid formation of these channels suggests that they result from streamer-like phenomena in the bulk silicon.

• OSTI ID: 244923
• Journal Information: IEEE Transactions on Plasma Science, Vol. 24, Issue 1; Other Information: PBD: Feb 1996
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
ELECTRIC CURRENTS
IMAGES
SEMICONDUCTOR DEVICES
BREAKDOWN
SILICON
SCHLIEREN METHOD
ELECTRIC POTENTIAL
FLASHOVER