Material characteristics and equivalent circuit models of stacked graphene oxide for capacitive humidity sensors

Journal Article · Tue Mar 15 00:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4943509· OSTI ID:22611610

Han, Kook In; Lee, In Gyu; Kim, Seung Du ^[1]; Yang, Woo Seok ^[2]; Kim, Hyeong Seok; Shin, Myunghun ^[3]; Kim, Jong Pil ^[4]; Cho, Byung Jin ^[5]

---

1. Department of Materials Engineering, Korea Aerospace University, Goyang 412-791 (Korea, Republic of)
2. Electronic Materials and Device Research Center, Korea Electronics Technology Institute, Seongnam 463-816 (Korea, Republic of)
3. School of Electronics and Information Engineering, Korea Aerospace University, Goyang 412-791 (Korea, Republic of)
4. Division of High Technology Materials Research & Molecular Materials Research Team, Korea Basic Science Institute, Busan 168-230 (Korea, Republic of)
5. Department of Electrical Engineering, KAIST, Daejeon 305-701 (Korea, Republic of)

The oxidation properties of graphene oxide (GO) are systematically correlated with their chemical sensing properties. Based on an impedance analysis, the equivalent circuit models of the capacitive sensors are established, and it is demonstrated that capacitive operations are related to the degree of oxidation. This is also confirmed by X-ray diffraction and Raman analysis. Finally, highly sensitive stacked GO sensors are shown to detect humidity in capacitive mode, which can be useful in various applications requiring low power consumption.

• OSTI ID: 22611610
• Journal Information: AIP Advances, Vol. 6, Issue 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
EQUIVALENT CIRCUITS
GRAPHENE
HUMIDITY
IMPEDANCE
OXIDES
RAMAN EFFECT
SENSORS
X RADIATION
X-RAY DIFFRACTION