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Title: Structural and electrical transport studies on CrN(001) thin films

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4948069· OSTI ID:22608808
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  1. CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi-110012 (India)

We report the structural and electrical transport studies on CrN{sub 1-x} (CrN) thin films with varying of N{sub 2} flow (5 – 25 SCCM) in an Argon environment of 25 SCCM. CrN thin films were grown at 600°C, in a multi chamber vacuum system at working pressure of 1×10{sup −2} Torr, under the base pressure of 1×10{sup −7} Torr. Structural and electrical transport measurements were carried out using X-ray diffraction (XRD), atomic force microscopy (AFM) and SQUID magnetometer, respectively. XRD (θ-2θ, ω-2θ, and ω) patterns on CrN thin films revealed a structural phase transition which is associated with the lattice parameter variation from 4.136 to 4.168 Å. The temperature dependent resistivity measurements on CrN/MgO(001) showed a clear change in slope at ≈280 K which confirms the magneto-structural transition of CrN from paramagnetic rock salt face-centered-cubic (FCC) to antiferromagnetic orthorhombic structure.

OSTI ID:
22608808
Journal Information:
AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English