Low-energy mass-selected ion beam production of fragments produced from hexamethyldisilane for SiC film formation
Journal Article
·
· Journal of Applied Physics
- Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871 (Japan)
We have proposed an experimental methodology which makes it possible to deposit silicon carbide (SiC) films on Si substrates with a low-energy mass-selected ion beam system using hexamethyldisilane (HMD) as a gas source. In this study, one of the fragment ions produced from HMD, SiCH{sub 4}{sup +}, was mass-selected. The ion energy was approximately 100 eV. Then, the SiCH{sub 4}{sup +} ions were irradiated to a Si(100) substrate. When the temperature of the Si substrate was set at 800 °C during the ion irradiation, the X-ray diffraction and Raman spectroscopy of the substrate following the completion of ion irradiation experiment demonstrated the occurrence of 3C-SiC deposition.
- OSTI ID:
- 22596876
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 10; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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