Investigation on onset voltage and conduction channel temperature in voltage-induced metal-insulator transition of vanadium dioxide
- Department of Physics, Yonsei University, Seoul 03722 (Korea, Republic of)
- Division of Applied Chemistry and Biotechnology, Hanbat National University, Daejeon 34158 (Korea, Republic of)
- Korea, Republic of
The characteristics of onset voltages and conduction channel temperatures in the metal-insulator transition (MIT) of vanadium dioxide (VO{sub 2}) devices are investigated as a function of dimensions and ambient temperature. The MIT onset voltage varies from 18 V to 199 V as the device length increases from 5 to 80 μm at a fixed width of 100 μm. The estimated temperature at local conduction channel increases from 110 to 370 °C, which is higher than the MIT temperature (67 °C) of VO{sub 2}. A simple Joule-heating model is employed to explain voltage-induced MIT as well as to estimate temperatures of conduction channel appearing after MIT in various-sized devices. Our findings on VO{sub 2} can be applied to micro- to nano-size tunable heating devices, e.g., microscale scanning thermal cantilevers and gas sensors.
- OSTI ID:
- 22594516
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 12; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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