F-atom kinetics in SF{sub 6}/Ar inductively coupled plasmas
- Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)
The F-atom kinetics in SF{sub 6} and SF{sub 6}/Ar inductively coupled plasmas (ICPs) were investigated using a global model. This report particularly focuses on the effects of ICP power and Ar fraction on F-atom density and its main production and loss mechanisms. The results are presented for a relatively wide pressure range of 1–100 mTorr. Very different behaviors were observed for Ar fractions in the low- and high-pressure limits, which can be attributed to different electron kinetics. In addition, the authors found that increasing the Ar fraction in the SF{sub 6}/Ar plasma has almost the same effects on the F-atom kinetics as increasing the power in the SF{sub 6} plasma. This is because a high electron density occurs in both cases. Moreover, it was confirmed that, for both sample types, a cycle of F atoms formed in the bulk plasma. The source of these is F{sub 2} molecules that are first formed on the chamber wall and then emitted. Finally, the simulations of F-atom kinetics are validated by quantitatively comparing the calculated electron and F-atom densities with identical experimental discharge conditions.
- OSTI ID:
- 22592896
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 34, Issue 3; Other Information: (c) 2016 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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