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Title: Electron density modulation in a pulsed dual-frequency (2/13.56 MHz) dual-antenna inductively coupled plasma discharge

Journal Article · · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
DOI:https://doi.org/10.1116/1.4959844· OSTI ID:22592850
 [1];  [2];  [3];  [4]
  1. Plasma Research Laboratory, School of Physical Sciences, Dublin City University, Dublin 9 (Ireland)
  2. Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)
  3. Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, South Korea and SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeunggi-do 440-746 (Korea, Republic of)
  4. Plasma Research Laboratory, School of Physical Sciences, Dublin City University, Dublin 9, Ireland and Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

The electron density, n{sub e}, modulation is measured experimentally using a resonance hairpin probe in a pulsed, dual-frequency (2/13.56 MHz), dual-antenna, inductively coupled plasma discharge produced in argon-C{sub 4}F{sub 8} (90–10) gas mixtures. The 2 MHz power is pulsed at a frequency of 1 kHz, whereas 13.56 MHz power is applied in continuous wave mode. The discharge is operated at a range of conditions covering 3–50 mTorr, 100–600 W 13.56 MHz power level, 300–600 W 2 MHz peak power level, and duty ratio of 10%–90%. The experimental results reveal that the quasisteady state n{sub e} is greatly affected by the 2 MHz power levels and slightly affected by 13.56 MHz power levels. It is observed that the electron density increases by a factor of 2–2.5 on increasing 2 MHz power level from 300 to 600 W, whereas n{sub e} increases by only ∼20% for 13.56 MHz power levels of 100–600 W. The rise time and decay time constant of n{sub e} monotonically decrease with an increase in either 2 or 13.56 MHz power level. This effect is stronger at low values of 2 MHz power level. For all the operating conditions, it is observed that the n{sub e} overshoots at the beginning of the on-phase before relaxing to a quasisteady state value. The relative overshoot density (in percent) depends on 2 and 13.56 MHz power levels. On increasing gas pressure, the n{sub e} at first increases, reaching to a maximum value, and then decreases with a further increase in gas pressure. The decay time constant of n{sub e} increases monotonically with pressure, increasing rapidly up to 10 mTorr gas pressure and at a slower rate of rise to 50 mTorr. At a fixed 2/13.56 MHz power level and 10 mTorr gas pressure, the quasisteady state n{sub e} shows maximum for 30%–40% duty ratio and decreases with a further increase in duty ratio.

OSTI ID:
22592850
Journal Information:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 34, Issue 5; Other Information: (c) 2016 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
Country of Publication:
United States
Language:
English