Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

Journal Article · Mon Apr 18 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4947448· OSTI ID:22591613

Syperek, M.; Misiewicz, J.; Sęk, G. ^[1]; Somers, A.; Kamp, M. ^[2]; Höfling, S. ^[2]; Reithmaier, J. P. ^[2]

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1. Laboratory for Optical Spectroscopy of Nanostructures, Division of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland)
2. Technische Physik, University of Würzburg, Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg (Germany)

We report on single photon emission from a self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 μm at the elevated temperatures. The photon auto-correlation histograms of the emission from a charged exciton indicate clear antibunching dips with as-measured g{sup (2)}(0) values significantly below 0.5 recorded at temperatures up to 80 K. It proves that the charged exciton complex in a single quantum dash of the mature InP-based material system can act as a true single photon source up to at least liquid nitrogen temperature. This demonstrates the huge potential of InAs on InP nanostructures as the non-classical light emitters for long-distance fiber-based secure communication technologies.

• OSTI ID: 22591613
• Journal Information: Applied Physics Letters, Vol. 108, Issue 16; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CORRELATIONS
FIBERS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
NANOSTRUCTURES
PHOTON EMISSION
PHOTONS