Anomalous behavior of 1/f noise in graphene near the charge neutrality point

Journal Article · Mon Mar 07 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4943642· OSTI ID:22591421

Takeshita, Shunpei; Tanaka, Takahiro; Arakawa, Tomonori; Kobayashi, Kensuke ^[1]; Matsuo, Sadashige ^[1]; Nakaharai, Shu; Tsukagoshi, Kazuhito ^[2]; Moriyama, Takahiro; Ono, Teruo ^[3]

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1. Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043 (Japan)
2. WPI-MANA, NIMS, Tsukuba, Ibaraki 305-0044 (Japan)
3. Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)

We investigate the noise in single layer graphene devices from equilibrium to far-from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (V{sub SD}). While the Hooge's relation is not the case around the charge neutrality point, we found that it is recovered at very low V{sub SD} region. We propose that the depinning of the electron-hole puddles is induced at finite V{sub SD}, which may explain this anomalous noise behavior.

• OSTI ID: 22591421
• Journal Information: Applied Physics Letters, Vol. 108, Issue 10; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ELECTRIC POTENTIAL
EQUILIBRIUM
EQUIPMENT
GRAPHENE
LAYERS
NOISE