Annealing effect on thermodynamic and physical properties of mesoporous silicon: A simulation and nitrogen sorption study
- Department of Physics, Manipal University Jaipur-303007, Rajasthan (India)
- Hamburg University of Technology,Institute of Materials Physics and Technology, D-21073 Hamburg,Germany (Germany)
Discovery of porous silicon formation in silicon substrate in 1956 while electro-polishing crystalline Si in hydrofluoric acid (HF), has triggered large scale investigations of porous silicon formation and their changes in physical and chemical properties with thermal and chemical treatment. A nitrogen sorption study is used to investigate the effect of thermal annealing on electrochemically etched mesoporous silicon (PS). The PS was thermally annealed from 200°C to 800°C for 1 hr in the presence of air. It was shown that the pore diameter and porosity of PS vary with annealing temperature. The experimentally obtained adsorption / desorption isotherms show hysteresis typical for capillary condensation in porous materials. A simulation study based on Saam and Cole model was performed and compared with experimentally observed sorption isotherms to study the physics behind of hysteresis formation. We discuss the shape of the hysteresis loops in the framework of the morphology of the layers. The different behavior of adsorption and desorption of nitrogen in PS with pore diameter was discussed in terms of concave menisci formation inside the pore space, which was shown to related with the induced pressure in varying the pore diameter from 7.2 nm to 3.4 nm.
- OSTI ID:
- 22591085
- Journal Information:
- AIP Conference Proceedings, Vol. 1724, Issue 1; Conference: ETMN-2015: 2. international conference on emerging technologies: Micro to nano 2015, Rajasthan (India), 24-25 Oct 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
ADSORPTION
ANNEALING
CHEMICAL PROPERTIES
COMPUTERIZED SIMULATION
DESORPTION
ELECTROCHEMISTRY
HYDROFLUORIC ACID
HYSTERESIS
ISOTHERMS
LAYERS
MORPHOLOGY
NANOSTRUCTURES
NITROGEN
PHYSICAL PROPERTIES
POROSITY
POROUS MATERIALS
SILICON
SUBSTRATES
TEMPERATURE DEPENDENCE