Light sensitive memristor with bi-directional and wavelength-dependent conductance control

Journal Article · Mon Jul 11 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4955464· OSTI ID:22590608

Maier, P.; Emmerling, M.; Schneider, C.; Kamp, M.; Worschech, L. ^[1]; Rebello Sousa Dias, M. ^[2]; Castelano, L. K.; Marques, G. E.; Lopez-Richard, V. ^[2]; Höfling, S. ^[1]

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1. Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany)
2. Departamento de Fisica, Universidade Federal de São Carlos, 13565-905 São Carlos, São Paulo (Brazil)

We report the optical control of localized charge on positioned quantum dots in an electro-photo-sensitive memristor. Interband absorption processes in the quantum dot barrier matrix lead to photo-generated electron-hole-pairs that, depending on the applied bias voltage, charge or discharge the quantum dots and hence decrease or increase the conductance. Wavelength-dependent conductance control is observed by illumination with red and infrared light, which leads to charging via interband and discharging via intraband absorption. The presented memristor enables optical conductance control and may thus be considered for sensory applications in artificial neural networks as light-sensitive synapses or optically tunable memories.

• OSTI ID: 22590608
• Journal Information: Applied Physics Letters, Vol. 109, Issue 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
CONTROL
HOLES
ILLUMINANCE
QUANTUM DOTS
VISIBLE RADIATION
WAVELENGTHS