Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
- CNRS, Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis (France)
- CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France)
- Université de Lorraine, CentraleSupélec, LMOPS, EA4423, 57070 Metz (France)
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.
- OSTI ID:
- 22590560
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 10; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DISLOCATIONS
ELECTRODES
FILMS
GALLIUM NITRIDES
GRAPHENE
LAYERS
MOBILITY
MONOCRYSTALS
NANOSTRUCTURES
OPTOELECTRONIC DEVICES
ORGANOMETALLIC COMPOUNDS
ORIENTATION
SILICON CARBIDES
SUBLIMATION
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY
ZINC SULFIDES