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Title: High-brightness laser-induced EUV source based on tin plasma with an unlimited lifetime of electrodes

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
;  [1]; ;  [2];  [3];  [4]
  1. EUV Labs, Ltd., Troitsk, Moscow (Russian Federation)
  2. Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow (Russian Federation)
  3. State Research Center of Russian Federation 'Troitsk Institute for Innovation and Fusion Research', Troitsk, Moscow Region (Russian Federation)
  4. P N Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

Characteristics of a source of laser-induced radiation in the extreme ultraviolet (EUV) range, obtained in a discharge between two jets of liquid tin, are investigated. The possibility of designing a high-brightness EUV source on this basis for employing in mask inspection techniques in projection EUV lithography is demonstrated. The average efficiency of converting the electric energy to radiation in the spectral range of 13.5 ± 0.135 nm is approximately 2%/2π sr with the size of emitting plasma 0.2 ± 0.35 mm. The possibility of producing a EUV source with a brightness of about 200 W (mm{sup 2} sr){sup -1} is demonstrated. (euv lithography sources)

OSTI ID:
22551113
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Vol. 46, Issue 1; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
Country of Publication:
United States
Language:
English

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