Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

Journal Article · Fri Aug 07 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4928206· OSTI ID:22494691

Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L. ^[1]; Charlton, T. R.; Kinane, C. J.; Langridge, S. ^[2]

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1. School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD (United Kingdom)
2. ISIS, Rutherford Appleton Laboratory, Harwell Science and Innovation Campus, Science and Technology Facilities Council, Oxon OX11 0QX (United Kingdom)

We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

• OSTI ID: 22494691
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DEPTH
FERROMAGNETIC MATERIALS
LAYERS
MAGNETIC FIELDS
MAGNETIZATION
MAGNETOMETERS
NEUTRONS
REFLECTIVITY
SEMICONDUCTOR MATERIALS
SPATIAL DISTRIBUTION