Fabrication and characterization of perovskite-based CH{sub 3}NH{sub 3}Pb{sub 1-x}Ge{sub x}I{sub 3}, CH{sub 3}NH{sub 3}Pb{sub 1-x}Tl{sub x}I{sub 3} and CH{sub 3}NH{sub 3}Pb{sub 1-x}In{sub x}I{sub 3} photovoltaic devices

Journal Article · Mon Feb 01 00:00:00 EST 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4941219· OSTI ID:22494593

Ohishi, Yuya; Oku, Takeo; Suzuki, Atsushi ^[1]

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1. Department of Materials Science, The University of Shiga Prefecture 2500 Hassaka, Hikone, Shiga 522-8533 (Japan)

Perovskite-type CH{sub 3}NH{sub 3}PbI{sub 3}-based photovoltaic devices were fabricated and characterized. Doping effects of thallium (Tl), indium (In), or germanium (Ge) element on the photovoltaic properties and surface structures of the perovskite phase were investigated. The open circuit voltage increased by Ge addition, and fill factors were improved by adding a small amount of Ge, Tl or In. In addition, the wavelength range of incident photon conversion efficiencies was expanded by the Tl addition.

• OSTI ID: 22494593
• Journal Information: AIP Conference Proceedings, Vol. 1709, Issue 1; Conference: IRAGO conference 2015: 360 degree outlook on critical scientific and technological challenges for a sustainable society, Aichi (Japan), 22-23 Oct 2015; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ACCIDENTS
CONVERSION
EFFICIENCY
ELECTRIC POTENTIAL
EQUIPMENT
FABRICATION
FILL FACTORS
GERMANIUM
INDIUM
PEROVSKITE
PHOTONS
PHOTOVOLTAIC EFFECT
SURFACES
THALLIUM
WAVELENGTHS