Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy

Journal Article · Mon Dec 28 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4939293· OSTI ID:22493114

Webster, P. T.; Riordan, N. A.; Liu, S.; Zhang, Y. -H.; Steenbergen, E. H. ^[1]; Synowicki, R. A. ^[2]

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1. U. S. Air Force Research Laboratory, AFRL/RXAN, Wright Patterson, Ohio 45433 (United States)
2. J. A. Woollam Co., Inc., 645 M. Street, Suite 102, Lincoln, Nebraska 68508 (United States)

The structural and optical properties of lattice-matched InAs{sub 0.911}Sb{sub 0.089} bulk layers and strain-balanced InAs/InAs{sub 1−x}Sb{sub x} (x ∼ 0.1–0.4) superlattices grown on (100)-oriented GaSb substrates by molecular beam epitaxy are examined using X-ray diffraction, spectroscopic ellipsometry, and temperature dependent photoluminescence spectroscopy. The photoluminescence and ellipsometry measurements determine the ground state bandgap energy and the X-ray diffraction measurements determine the layer thickness and mole fraction of the structures studied. Detailed modeling of the X-ray diffraction data is employed to quantify unintentional incorporation of approximately 1% Sb into the InAs layers of the superlattices. A Kronig-Penney model of the superlattice miniband structure is used to analyze the valence band offset between InAs and InAsSb, and hence the InAsSb band edge positions at each mole fraction. The resulting composition dependence of the bandgap energy and band edge positions of InAsSb are described using the bandgap bowing model; the respective low and room temperature bowing parameters for bulk InAsSb are 938 and 750 meV for the bandgap, 558 and 383 meV for the conduction band, and −380 and −367 meV for the valence band.

• OSTI ID: 22493114
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANTIMONY
ELLIPSOMETRY
GALLIUM ANTIMONIDES
GROUND STATES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
MEV RANGE
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
SIMULATION
SPECTROSCOPY
STRAINS
SUBSTRATES
SUPERLATTICES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
VALENCE
X-RAY DIFFRACTION