Structural and optical study of Ce segregation in Ce-doped SiO{sub 1.5} thin films
- Université de Lorraine, UMR CNRS 7198, Institut Jean Lamour, BP 70239, 54506 Vandoeuvre-lès-Nancy (France)
Cerium doped SiO{sub 1.5} thin films fabricated by evaporation and containing silicon nanocrystals were investigated by atom probe tomography. The effect of post-growth annealing treatment has been systematically studied to correlate the structural properties obtained by atom probe tomography to the optical properties measured by photoluminescence spectroscopy. The atom probe results demonstrated the formation of Ce-Si rich clusters upon annealing at 900 °C which leads to a drastic decrease of the Ce-related luminescence. At 1100 °C, pure Si nanocrystals and optically active cerium silicate compounds are formed. Consequently, the Ce-related luminescence is found to re-appear at this temperature while no Si-nanocrystal related luminescence is observed for films containing more than 3% Ce.
- OSTI ID:
- 22493062
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Optical characterizations of doped silicon nanocrystals grown by co-implantation of Si and dopants in SiO₂
Interaction of Ce{sub 1−x}Er{sub x}O{sub 2−y} nanoparticles with SiO{sub 2}-effect of temperature and atmosphere