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Title: Phase stabilization of VO{sub 2} thin films in high vacuum

A new growth approach to stabilize VO{sub 2} on Al{sub 2}O{sub 3} in high vacuum is reported by reducing vanadium oxytriisopropoxide (VTIP) with vanadium metal. Phase stabilization and surface wetting behavior were studied as a function of growth parameters. The flux balance of VTIP to V in combination with growth temperature was identified to be critical for the growth of high quality VO{sub 2} thin films. High V fluxes were required to suppress the island formation and to ensure a coalesced film, while too high V fluxes ultimately favored the formation of the undesired, epitaxially stabilized V{sub 2}O{sub 3} phase. Careful optimization of growth temperature, VTIP to V ratio, and growth rate led to high quality single phase VO{sub 2} thin films with >3.5 orders of magnitude change in resistivity across the metal-to-insulator transition. This approach opens up another synthesis avenue to stabilize oxide thin films into desired phases.
Authors:
; ; ;  [1]
  1. Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
Publication Date:
OSTI Identifier:
22492925
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; EPITAXY; FUNCTIONS; OPTIMIZATION; SURFACES; SYNTHESIS; THIN FILMS; VANADIUM; VANADIUM OXIDES