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Title: Negative terahertz conductivity in remotely doped graphene bilayer heterostructures

Injection or optical generation of electrons and holes in graphene bilayers (GBLs) can result in the interband population inversion enabling the terahertz (THz) radiation lasing. The intraband radiative processes compete with the interband transitions. We demonstrate that remote doping enhances the indirect interband generation of photons in the proposed GBL heterostructures. Therefore, such remote doping helps to surpass the intraband (Drude) absorption, and results in large absolute values of the negative dynamic THz conductivity in a wide range of frequencies at elevated (including room) temperatures. The remotely doped GBL heterostructure THz lasers are expected to achieve higher THz gain compared with previously proposed GBL-based THz lasers.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [1]
  1. Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan)
  2. (Russian Federation)
  3. Department of Computer Science and Engineering, University of Aizu, Aizu-Wakamatsu 965-8580 (Japan)
  4. Department of Electrical Engineering, University at Buffalo, SUNY, Buffalo, New York 1460-1920 (United States)
  5. Departments of Electrical, Electronics, and Systems Engineering and Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
Publication Date:
OSTI Identifier:
22492903
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; DOPED MATERIALS; ENERGY-LEVEL TRANSITIONS; GRAPHENE; HOLES; LASERS; LAYERS; PHOTONS; POPULATION INVERSION; TEMPERATURE RANGE 0273-0400 K