Room temperature spin injection into (110) GaAs quantum wells using Fe/x-AlO{sub x} contacts in the regime of current density comparable to laser oscillation
- Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192 (Japan)
- Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-J3-15 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)
We investigate the electrical spin injection into (110) GaAs single quantum wells (SQWs) and multiple quantum wells (MQWs) using light-emitting diodes (LEDs) having Fe/crystalline-AlO{sub x} (x-AlO{sub x}) tunnel barrier contacts. A degree of circular polarization (P{sub c}) of 5.0% is obtained for the SQW LED at 4 K with the current density of 1 kA/cm{sup 2} which is comparable to that for the laser oscillation in vertical-cavity surface-emitting lasers (VCSELs). On the basis of electron spin relaxation time and carrier lifetime in the (110) GaAs SQW measured by time-dependent photoluminescence and the value of P{sub c} = 5.0%, the degree of spin polarization of initially injected electrons (P{sub 0}) in the SQW is estimated to be 6.6% at 4 K. By using the MQW LED having a much stronger electroluminescence, a P{sub c} value of 2.6% is obtained at room temperature (RT) with the current density of 1.5 kA/cm{sup 2}. The temperature and current density dependences of P{sub c} are found to be weak in both the SQW and MQW LEDs. The estimated P{sub 0} of 9.3% at RT suggests that the Fe/x-AlO{sub x} contacts can be used for the RT electrical spin injection for spin-controlled VCSELs.
- OSTI ID:
- 22492850
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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