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Title: High-temperature thermoelectric properties of Hg-doped CuInTe{sub 2}

Polycrystalline samples of composition CuIn{sub 1−x}Hg{sub x}Te{sub 2} (x = 0–0.21) were synthesized from elements of 5N purity using a solid state reaction. The phase purity of the products was verified by X-ray diffraction. Samples for transport property measurements were prepared using hot-pressing. The samples were characterized by measurement of the electrical conductivity, Hall coefficient, Seebeck coefficient, and thermal conductivity over a temperature range of 300–675 K. All samples show p-type conductivity. We discuss the influence of Hg substitution on the free carrier concentration and thermoelectric performance. The investigation of the thermoelectric properties shows up to a 40% improvement of ZT in the temperature range of 300–600 K.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic)
  2. Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, Heyrovsky sq. 2, 16206 Praha (Czech Republic)
Publication Date:
OSTI Identifier:
22492742
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; HOT PRESSING; POLYCRYSTALS; TEMPERATURE RANGE 0400-1000 K; THERMAL CONDUCTIVITY; THERMOELECTRIC PROPERTIES; X-RAY DIFFRACTION