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Title: High-temperature thermoelectric properties of Hg-doped CuInTe{sub 2}

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4931600· OSTI ID:22492742
; ; ;  [1]; ;  [2]
  1. Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic)
  2. Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, Heyrovsky sq. 2, 16206 Praha (Czech Republic)

Polycrystalline samples of composition CuIn{sub 1−x}Hg{sub x}Te{sub 2} (x = 0–0.21) were synthesized from elements of 5N purity using a solid state reaction. The phase purity of the products was verified by X-ray diffraction. Samples for transport property measurements were prepared using hot-pressing. The samples were characterized by measurement of the electrical conductivity, Hall coefficient, Seebeck coefficient, and thermal conductivity over a temperature range of 300–675 K. All samples show p-type conductivity. We discuss the influence of Hg substitution on the free carrier concentration and thermoelectric performance. The investigation of the thermoelectric properties shows up to a 40% improvement of ZT in the temperature range of 300–600 K.

OSTI ID:
22492742
Journal Information:
Journal of Applied Physics, Vol. 118, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English

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