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Title: Generation of silicon nanocrystals by damage free continuous wave laser annealing of substrate-bound SiO{sub x} films

Silicon nanocrystals have been generated by laser induced phase separation in SiO{sub x} films. A continuous wave laser emitting at 405 nm is focused to a 6 μm diameter spot on 530 nm thick SiO{sub x} films deposited on fused silica substrates. Irradiation of lines is accomplished by focus scanning. The samples are investigated by atomic force microscopy, TEM, Raman spectroscopy, and photoluminescence measurements. At a laser power of 35 mW corresponding to an irradiance of about 1.2 × 10{sup 5 }W/cm{sup 2}, the formation of Si-nanocrystals in the film without any deterioration of the surface is observed. At higher laser power, the central irradiated region is oxidized to SiO{sub 2} and exhibits some porous character, while the surface remains optically smooth, and nanocrystals are observed beside and beneath this oxidized region. Amorphous Si-nanoclusters are formed at lower laser power and around the lines written at high power.
Authors:
;  [1] ; ; ;  [2]
  1. Laser-Laboratorium Göttingen e.V., Hans-Adolf-Krebs-Weg 1, 37077 Göttingen (Germany)
  2. IV. Physikalisches Institut, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany)
Publication Date:
OSTI Identifier:
22492731
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; ATOMIC FORCE MICROSCOPY; DAMAGE; FILMS; IRRADIATION; LASERS; NANOSTRUCTURES; PHOTOLUMINESCENCE; POROUS MATERIALS; RADIANT FLUX DENSITY; RAMAN SPECTROSCOPY; SILICA; SILICON; SILICON OXIDES; SUBSTRATES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY