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Title: Pulsed-N{sub 2} assisted growth of 5-20 nm thick β-W films

A technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N{sub 2} gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity were utilized to determine phase, bonding and thickness, respectively. X-ray diffraction patterns were utilized to determine the crystal structure, lattice constant and crystal size using the LeBail method. The flow rate of Nitrogen gas (continuous vs. pulsing) had significant impact upon the crystallinity and formation of β-phase W.
Authors:
;  [1] ; ; ; ; ;  [2]
  1. College of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203 (United States)
  2. College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203 (United States)
Publication Date:
OSTI Identifier:
22492171
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 11; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALS; ELECTRIC CONDUCTIVITY; FLOW RATE; LATTICE PARAMETERS; NITROGEN; REFLECTIVITY; SILICON; SILICON NITRIDES; SUBSTRATES; THIN FILMS; TUNGSTEN; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY