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Title: Interfacial chemical reaction and multiple gap state formation on three layer cathode in organic light-emitting diode: Ca/BaF{sub 2}/Alq{sub 3}

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4926503· OSTI ID:22490785
;  [1];  [2];  [3]
  1. Department of Physics, Kangwon National University, 1 Gangwondaehak-gil, Chuncheon-si, Gangwon-do 200-701 (Korea, Republic of)
  2. Institute of Physics and Applied Physics, Yonsei University, 50 Yonsei-ro, Seodaemoon-Gu, Seoul 120-749 (Korea, Republic of)
  3. Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Daejeon 305-340 (Korea, Republic of)

A three layer cathode is a promising stack structure for long lifetime and high efficiency in organic light-emitting diodes. The interfacial chemical reactions and their effects on electronic structures for alkaline-earth metal (Ca, Ba)/Alq{sub 3} [tris(8-hydroxyquinolinato)aluminum] and Ca/BaF{sub 2}/Alq{sub 3} are investigated using in-situ X-ray and ultraviolet photoelectron spectroscopy, as well as molecular model calculation. The BaF{sub 2} interlayer initially prevents direct contact between Alq{sub 3} and the reactive Ca metal, but it is dissociated into Ba and CaF{sub 2} by the addition of Ca. As the Ca thickness increases, the Ca penetrates the interlayer to directly participate in the reaction with the underlying Alq{sub 3}. This series of chemical reactions takes place irrespective of the BaF{sub 2} buffer layer thickness as long as the Ca overlayer thickness is sufficient. The interface reaction between the alkaline-earth metal and Alq{sub 3} generates two energetically separated gap states in a sequential manner. This phenomenon is explained by step-by-step charge transfer from the alkaline-earth metal to the lowest unoccupied molecular orbital states of Alq{sub 3}, forming new occupied states below the Fermi level.

OSTI ID:
22490785
Journal Information:
Journal of Applied Physics, Vol. 118, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English