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Title: I-V characteristics of in-plane and out-of-plane strained edge-hydrogenated armchair graphene nanoribbons

The effects of tensile strain on the current-voltage (I-V) characteristics of hydrogenated-edge armchair graphene nanoribbons are investigated by using DFT theory. The strain is introduced in two different ways related to the two types of systems studied in this work: in-plane strained systems (A) and out-of-plane strained systems due to bending (B). These two kinds of strain lead to make a distinction among three cases: in-plane strained systems with strained electrodes (A1) and with unstrained electrodes (A2), and out-of-plane homogeneously strained systems with unstrained, fixed electrodes (B). The systematic simulations to calculate the electronic transmission between two electrodes were focused on systems of 8 and 11 dimers in width. The results show that the differences between cases A2 and B are negligible, even though the strain mechanisms are different: in the plane case, the strain is uniaxial along its length; while in the bent case, the strain is caused by the arc deformation. Based on the study, a new type of nanoelectromechanical system solid state switching device is proposed.
Authors:
 [1] ;  [2]
  1. Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft (Netherlands)
  2. Department of Electronic and Computer Technology, Faculty of Sciences, University of Granada, Campus Fuentenueva s/n, E-18071 Granada (Spain)
Publication Date:
OSTI Identifier:
22490733
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CURRENTS; DIMERS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRODES; GRAPHENE; HYDROGENATION; LENGTH; NANOSTRUCTURES; NEMS; SIMULATION; STRAINS