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Title: Electronic and dielectric properties of vacancy clusters as quantum dot in silicane

First principal study of electronic and dielectric properties of a silicane nanostructure containing cluster of vacancies as quantum dot (QD) has been investigated within density functional theory (DFT). Electronic band structure and corresponding density of states show the decrease in band gap with increasing size of quantum dot. A band gap of 0.38 eV has been achieved for silicane containing 3QD. Electron energy loss spectra (EEL) function shows additional plasmonic features for QD containing silicane in visible region, which may have potential applications in optoelectronic devices.
Authors:
; ;  [1] ;  [2]
  1. Department of Physics, Himachal Pradesh University, Shimla-171005 (India)
  2. Department of Physics, Panjab University, Chandigarh-160014 (India)
Publication Date:
OSTI Identifier:
22490468
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; DENSITY FUNCTIONAL METHOD; DENSITY OF STATES; DIELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; ELECTRONS; ENERGY GAP; ENERGY-LOSS SPECTROSCOPY; EV RANGE; OPTOELECTRONIC DEVICES; PLASMONS; POTENTIALS; QUANTUM DOTS; SILICONES; VACANCIES