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Title: Impression of plasma voltage on growth of α-V{sub 2}O{sub 5} nanostructured thin films

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4917937· OSTI ID:22490407
;  [1]
  1. Thin film Laboratory, Department of Physics, Indian Institute of Technology Delhi-110016 (India)

In this communication, we synthesized vanadium pentoxide (α-V{sub 2}O{sub 5}) nanostructured thin films (NST{sub s}) accompanied with nanoflakes/ nanoplates on the Ni-coated glass substrates employing plasma assisted sublimation process (PASP) as a function of plasma voltage (V{sub p}). The effect of plasma voltage on structural, morphological, compositional, and vibrational properties have been studied systematically. The structural analysis divulged that all films deposited at different V{sub p} have pure orthorhombic phase, no impurity phase is detected under resolution limit of XRD and XPS. The morphological studies of samples is carried out by SEM, revealed that features as well as alignment of V{sub 2}O{sub 5} NST{sub s} is greatly monitored by V{sub p} and the film possessing the best features is obtained at 2500volt. In addition, XPS results reveal that V{sup 5+} oxidation state is the most prominent state in sample V{sub 2}, which represents better stoichiometric nature of film. The vibrational study of all samples is performed by FTIR and strongly support the XRD observations. All the results are in consonance with each other.

OSTI ID:
22490407
Journal Information:
AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English