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Title: Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

We present here the structural and electrical properties of the thin films of V{sub 2}O{sub 3} (Vanadium sesquioxide) and V{sub 5}O{sub 9}. Both these oxide phases, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}, have beenachieved on (001) orientedSi substrate using the V{sub 2}O{sub 5} target by optimizing the deposition parameters using pulsed laser deposition technique (PLD).Deposited films were characterized by X-ray diffraction(XRD)and four probe temperature dependent resistivity measurements. XRD studies reveal the V{sub 2}O{sub 3} and V{sub 5}O{sub 9} phases and the amount of strain present in both these films. The temperature dependency of electrical resistivity confirmed the characteristic metal-insulator transitions (MIT) for both the films, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}.
Authors:
;  [1] ; ; ;  [2]
  1. Department of Physics, Aligarh Muslim University, Aligarh-202002 (India)
  2. UGC-DAE Consortium for Scientific Research, Indore-452001 (India)
Publication Date:
OSTI Identifier:
22490202
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CONDUCTIVITY; ENERGY BEAM DEPOSITION; LASER RADIATION; OPTIMIZATION; PHASE TRANSFORMATIONS; PROBES; PULSED IRRADIATION; STRAINS; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; VANADIUM OXIDES; X-RAY DIFFRACTION