Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

Journal Article · Wed Jun 24 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4917609· OSTI ID:22490202

Rahman, F. ^[1]; Shukla, D. K.; Choudhary, R. J.; Phase, D. M. ^[2]

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1. Department of Physics, Aligarh Muslim University, Aligarh-202002 (India)
2. UGC-DAE Consortium for Scientific Research, Indore-452001 (India)

We present here the structural and electrical properties of the thin films of V{sub 2}O{sub 3} (Vanadium sesquioxide) and V{sub 5}O{sub 9}. Both these oxide phases, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}, have beenachieved on (001) orientedSi substrate using the V{sub 2}O{sub 5} target by optimizing the deposition parameters using pulsed laser deposition technique (PLD).Deposited films were characterized by X-ray diffraction(XRD)and four probe temperature dependent resistivity measurements. XRD studies reveal the V{sub 2}O{sub 3} and V{sub 5}O{sub 9} phases and the amount of strain present in both these films. The temperature dependency of electrical resistivity confirmed the characteristic metal-insulator transitions (MIT) for both the films, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}.

• OSTI ID: 22490202
• Journal Information: AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC CONDUCTIVITY
ENERGY BEAM DEPOSITION
LASER RADIATION
OPTIMIZATION
PHASE TRANSFORMATIONS
PROBES
PULSED IRRADIATION
STRAINS
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
VANADIUM OXIDES
X-RAY DIFFRACTION