Growth and characterization of α and β-phase tungsten films on various substrates
- Department of Physics, Inha University, Incheon 402-751 (Korea, Republic of)
The growth conditions of tungsten thin films were investigated using various substrates including Si, Si/SiO{sub 2}, GaAs, MgO, and Al{sub 2}O{sub 3}, and recipes were discovered for the optimal growth conditions of thick metastable β-phase tungsten films on Si, GaAs, and Al{sub 2}O{sub 3} substrates, which is an important material in spin orbit torque studies. For the Si/SiO{sub 2} substrate, the crystal phase of the tungsten films was different depending upon the tungsten film thickness, and the transport properties were found to dramatically change with the thickness owing to a change in phase from the α + β phase to the α-phase. It is shown that the crystal phase changes are associated with residual stress in the tungsten films and that the resistivity is closely related to the grain sizes.
- OSTI ID:
- 22489797
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 34, Issue 2; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
Similar Records
Quartz: structural and thermodynamic analyses across the α ↔ β transition with origin of negative thermal expansion (NTE) in β quartz and calcite
Beta (β) tungsten thin films: Structure, electron transport, and giant spin Hall effect